Gate-lastprocess

Gate-first process” to “Gate Last process” for sub-28nm CMOSFET design. Because “Gate Last technique” is a new and complicated process for gate structure ...

由 JJ Gu 著作 · 2011 · 被引用 40 次 — In a gate-last non-self aligned process, the metal gate electrode has an overlap of 100 nm with the source and drain region to avoid the ...

由 Y Noh 著作 · 2012 · 被引用 28 次 — The MCGL process can realize a low resistive tungsten (W) metal word-line with high-k IPD, a low damage on tunnel oxide/IPD, and a preferable FG shape.

2020年11月28日 — Key Migration of Semiconductor CMOS Technology- Four. High-k Dielectric and Metal Gate (HKMG) for Moore's Scaling. Wadekai.

The present invention provides a method of manufacturing a dummy gate in a gate last process, which comprises the steps of forming a dummy gate material ...

由 TY Hoffmann 著作 · 被引用 34 次 — Similar to Intel's 45nm process, this approach is based on a high-k first scheme though, so unless significant progress is being made to improve the thermal ...

In a gate-last process, the high-k material is deposited dummy gates are ... Companies that have reported on a gate-first process include IBM, UMC, Panasonic, ...

This paper reports on the fabrication and characterization of gate-last self-aligned in situ SiNx/AlN/GaN MISHEMTs. The devices featured in situ grown SiNx ...

由 Q Cheng 著作 · 2018 · 被引用 2 次 — This paper presents a self-aligned gate-last technologyto make quantum-well InAs transistors on SiO2/Si substrate.